| PART |
Description |
Maker |
| SSTS20100D |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSTS20100 |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD10L100CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSTS3040CT |
High Junction Temperature
|
Silikron Semiconductor Co.,LTD.
Silikron Semiconductor ...
|
| SSBD5L300A |
High Junction Temperature
|
Silikron Semiconductor Co.,...
|
| SSTS3060CT |
High Junction Temperature
|
Silikron Semiconductor Co.,LTD.
Silikron Semiconductor ...
|
| TN4015H-6G |
High junction temperature : Tj=150?
|
STMicroelectronics
|
| SMA6F5.0A |
High junction temperature Transil
|
STMicroelectronics
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| 2SK710 E001574 SK710 |
N CHANNEL JUNCTION TYPE (HIGH, AM HIGH, AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
SILICON N CHANNEL JUNCTION TYPE
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| BCR12CM-12LB BCR12CM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
